Reactive Ion Etcher RIE 2000 CE from South Bay Technology Inc.

Reactive Ion Etcher RIE 2000 CE from South Bay Technology Inc.

The RIE 2000 Reactive Ion Etcher allows anisotropic etching of several materials. It is a turbo pumped system capable of reaching a base pressure of less than 10-6 Torr. This low base pressure provides a clean etching environment and highly anisotropic etching without undercutting by eliminating residual species within the chamber prior to starting the etching process. Nowadays, the RIE 2000 is equipped with oxygen (O2), argon (Ar) and tetrafluoromethane (CF4) gases together with mixtures of oxygen/tetrafluoromethane (O2/CF4) gases.

FEATURES:

Manual controls allows processes in a wide range of vacuum pressure levels.

Adjustable forward power: 0-200 W.

Adjustable attack time from 0h:0min:1s to 9h:59min:59s.

Available gases: Ar, O2, CF4 and mixtures O2/CF4  to generate the plasma.

CONTACT US

Phone: (+34) 935 801 853

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Tlf.: (+34) 935 801 853; ext. 363/335
staff 02 50   This email address is being protected from spambots. You need JavaScript enabled to view it.
Tlf.: (+34) 935 801 853; ext. 364/335
staff 02 50   This email address is being protected from spambots. You need JavaScript enabled to view it.
Tlf.: (+34) 935 801 853; ext. 365/335

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