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In article number 1701614, Andrés Gómez, Adrián Carretero-Genevrier, and co-workers report a novel approach to integrate epitaxial nanostructured n-type semiconducting BaTiO3−δ films on silicon by combining molecular beam epitaxy and a water-based chemical method. This growth strategy results into epitaxial BaTiO3−δ/La0.7Sr0.3MnO3/SrTiO3/Si columnar nanostructures that enhance the flexoelectric response of the system and enables the control of the ferroelectric polarization and local conductivity (resistive switching) of this functional oxide upon applying a mechanical load.

DOI: 10.1002/smll.201770208 View/save citation

http://onlinelibrary.wiley.com/doi/10.1002/smll.201770208/full

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